|
|
|
马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。
您需要 登录 才可以下载或查看，没有账号？注册
×
本帖最后由 joshuacp 于 2025-6-25 10:02 编辑
电源大师2025年新作
The BaSIC Topology: A Revolutionary Power Device Control Strategy
共计两个附件。
The BaSIC Topology.part1.rar
(23 MB , 下载次数:
224 )
出版社官网对本书的介绍
书名:The BaSIC Topology A Revolutionary Power Device Control Strateg
Authors: B. Jayant Baliga, Ajit Kanale
出版时间：2025
About this book
The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives.
- Introduces the BaSIC topology – a revolutionary new approach for the control of power devices;
- Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices;
- Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.
|
|
/1 
eetop公众号
创芯大讲堂
创芯人才网
IP卡
狗仔卡
发表于 2025-6-25 09:38:29
提升卡
沉默卡
喧嚣卡
变色卡
创芯人才网