<22nm Gate Last FinFET Process Flow>去水印质量天花板

bigjohn · 发表于 2024-12-7 13:05:52

Many thanks.

tommy1993 · 发表于 2024-11-8 16:25:08

看看

ethanchung · 发表于 2024-11-8 12:51:59

本帖最后由 ethanchung 于 2024-11-8 12:53 编辑

Because FinFET is designed for reducing leakage current, therefore the space between each Fin is equal to MOS. The overhead one side is as source and the other side is drain.

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leejohannes · 发表于 2024-11-8 10:55:13

xxlb lbhh

skahill · 发表于 2024-11-8 10:42:53

Thanks for sharing

lhyi · 发表于 2024-11-8 05:53:51

Kan e kan

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<22nm Gate Last FinFET Process Flow>去水印质量天花板

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