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Study on Transmitter with Stacking-MOS Structure of Interface Circuits for Cross-Domain CDM ESD Protection
C. -Y. Hsueh and M. -D. Ker, "Study on Transmitter with Stacking-MOS Structure of Interface Circuits for Cross-Domain CDM ESD Protection," 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, 2021, pp. 1-7, doi: 10.1109/IPFA53173.2021.9617430. keywords: {Transmitters;Failure analysis;Receivers;Logic gates;Robustness;System-on-chip;Clamps;Electrostatic discharge (ESD);charged-device model (CDM);cross-domain interface circuit;stacking-MOS structure;transmitter circuit},
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发表于 2024-1-28 02:45:35
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