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发表于 2018-2-1 10:32:54
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Study of Internal Behavior of BCD ESD
Protection Devices under TLP and Very-Fast
TLP Stress
M. Blaho 1 , D. Pogany 1 , L. Zullino 2 , A. Andreini 2 , E. Gornik 1
1 Institute for Solid State Electronics, Vienna Univ. of Technology, Austria
2 STMicroelectronics, Cornaredo, Italy
Blaho.pdf
(202.77 KB , 下载次数:
57 )
Investigation on Safe Operating Area and ESD Robustness in a
60-V BCD Process with Different Deep P-Well Test Structures
Chia-Tsen Dai and Ming-Dou Ker
Institute of Electronics, National Chiao-Tung University, Taiwan
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