|
|
马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。
您需要 登录 才可以下载或查看，没有账号？注册
×
求助站上的神人..
請幫忙找一下這本..
謝謝
Robust SRAM Designs and Analysis
- Hardcover: 177 pages
- Publisher: Springer; 2012 edition (May 31, 2012)
- Language: English
- ISBN-10: 1461408172
- ISBN-13: 978-1461408178
Book Description[size=0.86em]Publication Date: May 31, 2012 | ISBN-10: 1461408172 | ISBN-13: 978-1461408178 | Edition: 2012
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
|
|
eetop公众号
创芯大讲堂
创芯人才网
发表于 2012-6-6 21:24:02
创芯人才网