Design of 2xVDD-tolerant I/O buffer with 1xVDD CMOS devices

tshiu · 发表于 2012-1-4 10:01:00

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ABSTRACT

A new 2xVDD-tolerant I/O buffer realized with only 1xVDD devices has been proposed and verified in a 0.18-mum CMOS process. With the dynamic source output technique and the new gate-controlled circuit, the new proposed I/O buffer can transmit and receive the signals with the voltage swing twice as high as the normal power supply voltage (VDD) without suffering gate-oxide reliability problem. The proposed 2xVDD-tolerant I/O circuit solution can be implemented in different nanoscale CMOS processes to meet the mixed-voltage interface applications in microelectronic systems.

jamesccp · 发表于 2012-1-5 17:04:38

看看，谢谢楼主

luckyyu · 发表于 2012-2-6 23:06:07

thanks for share

geneicz · 发表于 2012-2-9 16:22:02

thanks

raydcj · 发表于 2012-5-27 10:06:14

感谢楼主分享！！！

fixit · 发表于 2012-5-27 11:22:20

good!

raydcj · 发表于 2012-5-28 06:21:13

感谢楼主分享！！

simufox · 发表于 2016-5-30 10:58:13

大師之作

billlin · 发表于 2016-5-30 12:32:43

感谢楼主分享！！

cdting · 发表于 2016-6-1 13:07:09

非常感謝～～～～～

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[资料] Design of 2xVDD-tolerant I/O buffer with 1xVDD CMOS devices

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