寻求文献“IEEE，EDL vol.23，Issue:4 P212-214, 2002”

jiangbing1975

《A double RESURF LDMOS with drain profile engineering for improved ESD robustness》
This paper appears in: Electron Device Letters, IEEE
Issue Date: Apr 2002
Volume: 23 Issue: 4
On page(s): 212 - 214
ISSN: 0741-3106
INSPEC Accession Number: 7234929
Digital Object Identifier: 10.1109/55.992842
Date of Current Version: 07 八月 2002
这里先谢啦。